300UR Datasheet, PDF (2/6 Pages) Vishay Siliconix – Standard Recovery Diodes (Stud Version), 300 A

300U(R) Series
Vishay High Power Products ^{Standard Recovery Diodes}
(Stud Version), 300 A
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at case temperature
I_F(AV)
Maximum peak, one cycle forward,
non-repetitive surge current
I_FSM
Maximum I²t for fusing
I²t
Maximum I²âˆšt for fusing
Maximum value of threshold voltage
Maximum value of forward
slope resistance
Maximum forward voltage drop
I²âˆšt
V_F(TO)
r_f
V_FM
TEST CONDITIONS
180° conduction, half sine wave
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % V_RRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial T_J = T_J maximum
t = 10 ms
t = 8.3 ms
100 % V_RRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied
T_J = 200 °C
I_pk = 942 A, T_J = 25 °C
VALUES
300
130
6550
6850
5500
5750
214
195
151
138
2140
0.610
0.751
1.40
UNITS
A
°C
A
kA²s
kA²âˆšs
V
mΩ
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating and
storage temperature range
T_J, T_Stg
Maximum thermal resistance,
junction to case
R_thJC
DC operation
Maximum thermal resistance,
case to heatsink
R_thCS Mounting surface, smooth, flat and greased
Maximum allowed mounting torque
+ 0 - 20 %
Not lubricated threads
Lubricated threads
Approximate weight
Case style
(JEDEC) see dimensions - link at the end of datasheet
Note
(1) _{302U-A uses case style B-26}
VALUES
- 65 to 200
UNITS
°C
0.18
K/W
0.08
37
Nm
28
250
g
DO-205AB (DO-9) ⁽¹⁾
ΔR_thJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
0.020
0.015
120°
0.024
0.025
90°
0.031
60°
0.045
0.034
0.047
T_J = T_J maximum
K/W
30°
0.077
0.077
Note
• The table above shows the increment of thermal resistance R_thJC when devices operate at different conduction angles than DC
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Document Number: 93508
Revision: 24-Jun-08