300HFL Datasheet, PDF (2/6 Pages) Vishay Siliconix – Standard Recovery Diodes (Stud Version), 300 A

300HF..L Series
Vishay High Power Products ^{Standard Recovery Diodes}
(Stud Version), 300 A
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current
at case temperature
I_F(AV) 180° conduction, half sine wave
Maximum peak, one cycle forward,
non-repetitive surge current
Maximum I²t for fusing
Maximum I²âˆšt for fusing
Maximum value of threshold voltage
Maximum value of forward
slope resistance
Maximum forward voltage drop
I_FSM
I²t
I²âˆšt
V_F(TO)
r_f1
V_FM
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % V_RRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial T_J = T_J maximum
t = 10 ms
t = 8.3 ms
100 % V_RRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied
T_J = 180 °C
I_pk = 942 A, T_J = 25 °C
VALUES
300
120
5700
5900
4800
5000
160
148
115
105
1600
0.70
0.40
1.14
UNITS
A
°C
A
kA²s
kA²âˆšs
V
mΩ
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating and
storage temperature range
T_J, T_Stg
Maximum thermal resistance,
junction to case
R_thJC DC operation
Maximum thermal resistance,
case to heatsink
R_thCS Mounting surface, smooth, flat and greased
Maximum allowed mounting torque
+ 0 - 20 %
Not lubricated threads
lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES
- 40 to 180
UNITS
°C
0.17
K/W
0.08
37
N·m
28
250
g
DO-205AB (DO-9)
www.vishay.com
2
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Document Number: 93507
Revision: 02-Jun-08