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2N7000_09 Datasheet, PDF (2/6 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Single
Total Quad
Parameter
Drain-Source Voltage
Gate-Source Voltage—Non-Repetitive
Gate-Source Voltage—Continuous
Continuous Drain Current
(TJ = 150_C)
Pulsed Drain Currenta
TA= 25_C
TA= 100_C
Power Dissipation
TA= 25_C
TA= 100_C
Thermal Resistance, Junction-to-Ambient
Operating Junction and
Storage Temperature Range
Symbol
VDS
VGSM
VGS
ID
IDM
PD
RthJA
TJ, Tstg
2N7000
60
"40
"20
0.2
0.13
0.5
0.4
0.16
312.5
2N7002
60
"40
"20
0.115
0.073
0.8
0.2
0.08
625
VQ1000J
60
"30
"20
0.225
0.14
1
1.3
0.52
96
VQ1000P
60
"20
0.225
0.14
1
1.3
0.52
96
VQ1000J/P
BS170
60
"25
"20
0.5
0.175
Unit
V
A
2
0.83
W
0.8
62.5
156 _C/W
–55 to 150
_C
Notes
a. Pulse width limited by maximum junction temperature.
b. tp v 50 ms.
SPECIFICATIONSĊ2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N7000
2N7002
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
Drain-Source On-Resistanceb
Forward Transconductanceb
Common Source Output Conductanceb
Dynamic
rDS(on)
gfs
gos
VGS = 0 V, ID = 10 mA
VDS = VGS, ID = 1 mA
VDS = VGS, ID = 0.25 mA
VDS = 0 V, VGS = "15 V
VDS = 0 V, VGS = "20 V
VDS = 48 V, VGS = 0 V
TC = 125_C
VDS = 60 V, VGS = 0 V
TC = 125_C
VDS = 10 V, VGS = 4.5 V
VDS = 7.5 V, VGS = 10 V
VGS = 4.5 V, ID = 0.075 A
VGS = 5 V, ID = 0.05 A
TC = 125_C
VGS = 10 V, ID = 0.5 A
TJ = 125_C
VDS = 10 V, ID = 0.2 A
VDS = 5 V, ID = 0.05 A
70
60
2.1
0.8
3
2.0
"10
1
1000
0.35 0.075
1
4.5
5.3
3.2
5.8
2.4
5
4.4
9
100
0.5
60
V
1
2.5
nA
"100
mA
1
500
A
0.5
7.5
13.5
W
7.5
13.5
80
mS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
22
60
50
VDS = 25 V, VGS = 0 V
f = 1 MHz
11
25
25
pF
2
5
5
www.vishay.com
11-2
Document Number: 70226
S-04279—Rev. F, 16-Jul-01