2N4856JAN Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel JFETs

2N4856JAN/JANTX/JANTXV Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage :
(2N4856-58) . . . . . . . . . . . . . . . . . . . . . . . –40 V
(2N4859-61) . . . . . . . . . . . . . . . . . . . . . . . –30 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature (¹/₁₆” from case for 10 seconds) . . . . . . . . . . . . . . 300 _C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C
Power Dissipation^a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1800 mW
Notes
a. Derate 10.3 mW/_C to T_C > 25_C
SPECIFICATIONS FOR 2N4856, 2N4857 AND 2N4858 (T_A = 25_C UNLESS NOTED)
Limits
2N4856
2N4857
2N4858
Parameter
Symbol
Test Conditions
Typ^a Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current^b
Gate Reverse Current
Gate Operating Current^c
Drain Cutoff Current
Drain-Source On-Voltage
Drain-Source On-Resistance^c
Gate-Source
Forward Voltage^c
V_(BR)GSS
V_GS(off)
I_DSS
I_GSS
I_G
I_D(off)
V_DS(on)
r_DS(on)
V_GS(F)
I_G = –1 mA , V_DS = 0 V
V_DS = 15 V, I_D = 0.5 nA
V_DS = 15 V, V_GS = 0 V
V_GS = –20 V, V_DS = 0 V
T_A = 150_C
V_DG = 15 V, I_D = 10 mA
V_DS = 15 V, V_GS = –10 V
T_A = 150_C
I_D = 5 mA
V_GS = 0 V
I_D = 10 mA
I_D = 20 mA
V_GS = 0 V, I_D = 1 mA
I_G = 1 mA , V_DS = 0 V
–55 –40
–40
–40
V
–4 –10 –2
–6 –0.8 –4
50 175 20 100
8
80
mA
–5
–250
–250
–250 pA
–13
–500
–500
–500 nA
–5
pA
5
250
250
250
13
500
500
500
nA
0.25
0.5
0.35
0.5
V
0.5
0.75
25
40
60
W
0.7
V
Dynamic
Common-Source
Forward Transconductance^c
g_fs
6
V_DG = 20 V, I_D = 1 mA
mS
Common-Source
Output Conductance^c
g_os
f = 1 kHz
25
mS
Common-Source
Input Capacitance
C_iss
Common-Source
Reverse Transfer Capacitance
C_rss
7
V_DS = 0 V, V_GS = –10 V
f = 1 MHz
3
18
18
8
8
18
pF
8
Equivalent Input
Noise Voltage^c
e_n
V_DG = 10 V, I_D = 10 mA
f = 1 kHz
3
nV⁄
√Hz
Switching
Turn-On Time
Turn-Off Time
t_d(on)
2
6
6
10
t_r
V_DD = 10 V, V_GS(H) = 0 V
See Switching Circuit
2
3
4
10
ns
t_OFF
13
25
50
100
www.vishay.com
7-2
Document Number: 70244
S-04028—Rev. C, 04-Jun-01