2N4126 Datasheet, PDF (2/4 Pages) NXP Semiconductors – PNP general purpose transistor

2N4126
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
DC Current Gain
hFE
VCE = –1 V, IC = –2.0 mA
VCE = –1 V, IC = –50 mA
120
—
—
60
360
—
—
Collector Cutoff Current
–ICBO
VCB = –20 V
—
—
50
nA
Emitter Cutoff Current
–IEBO
VEB = –3 V
—
—
50
nA
Collector Saturation Voltage
–VCEsat IC = –50 mA, IB = –5 mA
—
—
0.4
V
Base Saturation Voltage
–VBEsat IC = –50 mA, IB = –5 mA
—
—
0.95
V
Collector-Emitter Breakdown Voltage
–V(BR)CEO
IC = –1 mA
25
—
—
V
Collector-Base Breakdown Voltage
–V(BR)CBO
IC = –10 µA
25
—
—
V
Emitter-Base Breakdown Voltage
–V(BR)EBO
IE = –10 µA
4
—
—
V
Gain-Bandwidth Product
fT
VCE = –5 V, IC = –10 mA
f = 50 MHz
—
200
—
MHz
Collector-Base Capacitance
CCBO VCB = –10 V, f = 1MHz
—
12
—
pF
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
www.vishay.com
2
Document Number 88116
07-May-02