240UR60D_12 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Standard Recovery Diodes (Stud Version), 320 A

240U(R).. Series
Vishay High Power Products ^{Standard Recovery Diodes}
(Stud Version), 320 A
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current
at case temperature
I_F(AV) 180° conduction, half sine wave
Maximum RMS forward current
Maximum peak, one cycle forward,
non-repetitive surge current
Maximum I²t for fusing
Maximum I²âˆšt for fusing
Slope resistance
Threshold voltage
Maximum forward voltage drop
I_F(RMS)
I_FSM
I²t
I²âˆšt
r_f
V_F(T0)
V_FM
DC at 80 °C case temperature
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % V_RRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial T_J = T_J maximum
t = 10 ms
t = 8.3 ms
100 % V_RRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied
T_J = T_J maximum
I_pk = 750 A, T_J = 25 °C, t_p = 10 ms sinusoidal wave
VALUES
320
100
500
4500
4700
3800
4000
101
92
72
66
1010
0.6
0.83
1.33
UNITS
A
°C
A
kA²s
kA²âˆšs
mΩ
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating
and storage temperature range
T_J, T_Stg
Maximum thermal resistance,
junction to case
R_thJC DC operation
Maximum thermal resistance,
case to heatsink
R_thCS Mounting surface, smooth, flat and greased
Maximum allowed mounting torque
+ 0 - 20 %
Not lubricated threads
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES
- 40 to 180
UNITS
°C
0.18
K/W
0.8
37 (330)
28 (250)
N·m
(lbf · in)
250
g
DO-205AB (DO-9
ΔR_thJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION TEST CONDITIONS
UNITS
180°
0.019
0.015
120°
0.023
0.025
90°
0.030
60°
0.045
0.034
0.047
T_J = T_J maximum
K/W
30°
0.076
0.076
Note
• The table above shows the increment of thermal resistance R_thJC when devices operate at different conduction angles than DC
www.vishay.com
2
For technical questions, contact: [e-mail]
Document Number: 93504
Revision: 28-May-08