20L15TPBF_12 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Schottky Rectifier, 20 A

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VS-20L15TPbF, VS-20L15T-N3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Forward voltage drop
See fig. 1
V_FM ⁽¹⁾
Reverse leakage current
See fig. 2
I_RM ⁽¹⁾
Threshold voltage
Forward slope resistance
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
V_F(TO)
r_t
C_T
L_S
dV/dt
Note
(1) _{Pulse width < 300 μs, duty cycle < 2 %}
19 A
40 A
19 A
40 A
T_J = 25 °C
T_J = 100 °C
TEST CONDITIONS
T_J = 25 °C
T_J = 125 °C
V_R = Rated V_R
T_J = T_J max.
V_R = 5 V_DC, (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V_R
TYP. MAX.
-
0.41
-
0.52
0.25 0.33
0.37 0.50
-
10
-
600
0.182
7.6
-
2000
8
-
10 000
UNITS
V
mA
V
m
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Maximum thermal resistance,
junction to ambient
T_J
T_Stg
R_thJC
R_thCS
R_thJA
DC operation
See fig. 4
Mounting surface, smooth and greased
(for TO-220)
DC operation
(for D²PAK)
Approximate weight
Mounting torque
Marking device
minimum
maximum
Non-lubricated threads
Case style TO-220AC
VALUES
- 55 to 125
- 50 to 150
1.5
UNITS
°C
0.50
°C/W
40
2
g
0.07
oz.
6 (5)
12 (10)
kgf ·cm
(lbf · in)
20L15T
Revision: 26-Aug-11
2
Document Number: 94165
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