20ETS08SPBF Datasheet, PDF (2/7 Pages) Vishay Siliconix – Input Rectifier Diode, 20 A

VS-20ETS08SPbF, VS-20ETS12SPbF High Voltage Series
Vishay Semiconductors ^{Input Rectifier Diode, 20 A}
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V_FM
r_t
V_F(TO)
I_RM
TEST CONDITIONS
20 A, T_J = 25 °C
T_J = 150 °C
T_J = 25 °C
T_J = 150 °C
V_R = Rated V_RRM
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage temperature range
Maximum thermal resistance,
junction to case
T_J, T_Stg
R_thJC
DC operation
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
R_thJA ⁽¹⁾ For D²PAK version
R_thCS Mounting surface, smooth and greased
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style D²PAK (SMD-220)
Note
(1) _{When mounted on 1” square (650 mm}2_{) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W}
For recommended footprint and soldering techniques refer to application note #AN-994
VALUES
1.1
10.4
0.85
0.1
1.0
UNITS
V
m
V
mA
VALUES
- 40 to 150
1.3
UNITS
°C
62
°C/W
0.5
2
g
0.07
oz.
6.0 (5.0)
12 (10)
kgf · cm
(lbf · in)
20ETS08S
20ETS12S
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 94340
[e-mail], [e-mail], [e-mail]
Revision: 28-Jul-10