20ETF10FPPBF Datasheet, PDF (2/8 Pages) Vishay Siliconix – Fast Soft Recovery Rectifier Diode, 20 A

20ETF10FPPbF, 20ETF12FPPbF Soft Recovery Series
Vishay Semiconductors
Fast Soft Recovery
Rectifier Diode, 20 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
V_FM
r_t
V_F(TO)
Maximum reverse leakage current
I_RM
TEST CONDITIONS
20 A, T_J = 25 °C
T_J = 150 °C
T_J = 25 °C
T_J = 150 °C
V_R = Rated V_RRM
VALUES
1.31
11.88
0.93
0.1
6
UNITS
V
m
V
mA
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL TEST CONDITIONS
Reverse recovery time
Reverse recovery current
Reverse recovery charge
t_rr
I_F at 20 Apk
I_rr
25 A/μs
25 °C
Q_rr
Snap factor
S
Typical
VALUES
400
6.1
1.7
0.6
UNITS
ns
A
μC
I_FM
t_rr
t_a t_b
t
dir
dt
Q_rr
I_RM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
T_J, T_Stg
R_thJC
R_thJA
R_thCS
DC operation
Mounting surface, smooth and greased
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style TO-220AC FULL-PAK
VALUES
- 40 to 150
UNITS
°C
1.5
62
°C/W
1.5
2
g
0.07
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
20ETF10FP
20ETF12FP
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 93222
[e-mail], [e-mail], [e-mail]
Revision: 26-Jul-10