20ETF08SPBF Datasheet, PDF (2/8 Pages) Vishay Siliconix – Fast Soft Recovery Rectifier Diode, 20 A

20ETF..SPbF Soft Recovery Series
Vishay High Power Products ^{Fast Soft Recovery}
Rectifier Diode, 20 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
V_FM
Forward slope resistance
r_t
Threshold voltage
V_F(TO)
Maximum reverse leakage current
I_RM
TEST CONDITIONS
20 A, T_J = 25 °C
T_J = 150 °C
T_J = 25 °C
T_J = 150 °C
V_R = Rated V_RRM
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
Reverse recovery time
t_rr
Reverse recovery current
I_rr
Reverse recovery charge
Q_rr
Snap factor
S
TEST CONDITIONS
I_F at 20 Apk
25 A/µs
25 °C
Typical
VALUES
400
6.1
1.7
0.6
UNITS
ns
A
µC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
T_J, T_Stg
Maximum thermal resistance,
junction to case
R_thJC
DC operation
Maximum thermal resistance,
junction to ambient (PCB mount)
R_thJA ⁽¹⁾
Soldering temperature
T_S
Approximate weight
Marking device
Case style D²PAK (SMD-220)
Note
(1) _{When mounted on 1" square (650 mm}2_{) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W}
For recommended footprint and soldering techniques refer to application note #AN-994
VALUES
1.31
11.88
0.93
0.1
6
UNITS
V
mΩ
V
mA
I_FM
t_rr
t_a t_b
t
dir
dt
Q_rr
I_RM(REC)
VALUES
- 40 to 150
UNITS
°C
0.9
°C/W
62
240
°C
2
g
0.07
oz.
20ETF08S
20ETF10S
20ETF12S
www.vishay.com
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For technical questions, contact: [e-mail]
Document Number: 94099
Revision: 17-Sep-09