20ETF02FPPBF Datasheet, PDF (2/8 Pages) Vishay Siliconix – Fast Soft Recovery Rectifier Diode, 20 A

20ETF..FPPbF Soft Recovery Series
Vishay Semiconductors
Fast Soft Recovery
Rectifier Diode, 20 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
V_FM
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
r_t
V_F(TO)
I_RM
TEST CONDITIONS
20 A, T_J = 25 °C
60 A, T_J = 25 °C
T_J = 150 °C
T_J = 25 °C
T_J = 150 °C
V_R = Rated V_RRM
VALUES
1.30
1.67
12.5
0.9
0.1
5.0
UNITS
V
m
V
mA
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
Reverse recovery time
t_rr
Reverse recovery current
I_rr
Reverse recovery charge
Q_rr
Snap factor
S
TEST CONDITIONS
I_F at 20 Apk
100 A/μs
25 °C
Typical
VALUES
160
10
1.25
0.6
UNITS
ns
A
μC
I_FM
t_rr
t_a t_b
dir
t
dt
Q_rr
I_RM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
T_J, T_Stg
R_thJC
DC operation
Maximum thermal resistance,
junction to ambient
R_thJA
Typical thermal resistance,
case to heatsink
R_thCS
Mounting surface, smooth and greased
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style TO-220 FULL-PAK
VALUES
- 40 to 150
UNITS
°C
1.5
62
°C/W
1.5
2
g
0.07
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
20ETF02FP
20ETF04FP
20ETF06FP
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For technical questions within your region, please contact one of the following: Document Number: 94095
[e-mail], [e-mail], [e-mail]
Revision: 06-Aug-10