20CTQ150PBF_12 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Schottky Rectifier, 2 x 10 A

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VS-20CTQ150PbF, VS-20CTQ150-N3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop per leg
See fig. 1
V_FM ⁽¹⁾
Maximum reverse leakage current per leg
See fig. 2
Typical junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1) _{Pulse width < 300 μs, duty cycle < 2 %}
I_RM
C_T
L_S
dV/dt
TEST CONDITIONS
10 A
20 A
T_J = 25 °C
10 A
20 A
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
V_R = Rated V_R
V_R = 5 V_DC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V_R
TYP.
0.80
0.90
0.63
0.73
3.0
2.7
-
-
-
MAX.
0.88
1.0
0.66
0.77
25
5.0
280
8.0
10 000
UNITS
V
μA
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
T_J, T_Stg
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink
R_thJC DC operation
R_thCS
Mounting surface, smooth and greased
(Only for TO-220)
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style TO-220AB
VALUES
- 55 to 175
UNITS
°C
2.0
1.0
°C/W
0.50
2
g
0.07
oz.
6 (5)
12 (10)
kgf ·cm
(lbf ·in)
20CTQ150
Revision: 26-Aug-11
2
Document Number: 94164
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