1N914_12 Datasheet, PDF (2/3 Pages) Vishay Siliconix – Fast Switching Diodes

1N914
Vishay Semiconductors
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
I_F = 10 mA
Breakdown voltage
I_R = 100 µA
V_R = 75 V
Peak reverse current
V_R = 20 V, T_j = 150 °C
V_R = 20 V
Diode capacitance
V_R = 0, f = 1 MHz
Reverse recovery time
I_F = 10 mA to I_R = 1 mA,
V_R = 6 V, R_L = 100 Ω
Typical Characteristics
T_amb = 25 °C, unless otherwise specified
1000
100
1N914
10
Scattering Limit
1
T _j= 25 °C
0.1
0
0.4
0.8
1.2
1.6 2.0
94 9170_1
V_F - Forward Voltage (V)
Figure 1. Forward Current vs. Forward Voltage
Symbol
Min.
Typ.
Max.
Unit
V_F
1000
mV
V_(BR)
100
V
I_R
5
µA
I_R
50
µA
I_R
25
nA
C_D
4
pF
t_rr
4
ns
1000
T_j = 25 °C
100
Scattering Limit
10
1
1
10
100
94 9098
V_R- Reverse Voltage (V)
Figure 2. Reverse Current vs. Reverse Voltage
Package Dimensions in millimeters (inches): DO-35
Cathode identification
26 (1.024) min.
Rev. 6 - Date: 29. January 2007
Document no.: 6.560-5004.02-4
94 9366
3.9 (0.154) max.
26 (1.024) min.
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number 85622
[e-mail], [e-mail], [e-mail] _{Rev. 1.8, 17-Aug-10}