1N5822-E3 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Schottky Barrier Rectifier

1N5820 thru 1N5822
Vishay General Semiconductor
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
1N5820
1N5821
1N5822
UNIT
Typical thermal resistance
R_θJA ⁽¹⁾
40
R_θJL ⁽¹⁾
10
°C/W
Note
(1) _{Thermal resistance from junction to lead vertical P.C.B. mounted, 0.500" (12.7 mm) lead length with 2.5" x 2.5" (63.5 mm x 63.5 mm) copper}
pad
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
1N5820-E3/54
1.08
54
1N5820-E3/73
1.08
73
BASE QUANTITY
1400
1000
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
4.0
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
3.0
2.0
1.0
100
T_J = 125 °C
10
Pulse Width = 300 μs
1 % Duty Cycle
1
T_J = 25 °C
0.1
0
0
20 40 60 80 100 120 140
Lead Temperature (°C)
Fig. 1 - Forward Current Derating Curve
80
70
T_J = T_J Max.
8.3 ms Single Half Sine-Wave
60
50
40
30
20
10
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
10
T_J = 125 °C
1
T_J = 75 °C
0.1
0.01
T_J = 25 °C
0.001
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
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For technical questions within your region, please contact one of the following: Document Number: 88526
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Revision: 20-Oct-09