1N4448_12 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Small Signal Fast Switching Diodes

1N4448
Vishay Semiconductors
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
I_F = 5 mA
I_F = 100 mA
V_F
620
V_F
720
mV
1000
mV
V_R = 20 V
I_R
25
nA
Reverse current
V_R = 20 V, T_j = 150 °C
I_R
50
µA
V_R = 75 V
I_R
5
µA
Breakdown voltage
I_R = 100 µA, t_p/T = 0.01,
t_p = 0.3 ms
V_(BR)
100
V
Diode capacitance
V_R = 0, f = 1 MHz, V_HF = 50 mV
C_D
4
pF
Rectification efficiency
V_HF = 2 V, f = 100 MHz
η_r
45
%
I_F = I_R = 10 mA, i_R = 1 mA
t_rr
8
ns
Reverse recovery time
I_F = 10 mA, V_R = 6 V,
i_R = 0.1 x I_R, R_L = 100 Ω
t_rr
4
ns
Typical Characteristics
T_amb = 25 °C, unless otherwise specified
1.2
1.0
I_F = 100 mA
0.8
10 mA
0.6
1 mA
0.4
0.1 mA
0.2
0
- 30
0
30
60 90 120
94 9169
T_j - Junction Temperature (°C)
Figure 1. Forward Voltage vs. Junction Temperature
1000
T_j = 25 °C
100
Scattering Limit
10
1
1
94 9098
10
100
V_R- Reverse Voltage (V)
Figure 3. Reverse Current vs. Reverse Voltage
1000
100
1N4448
10
Scattering Limit
1
T_j = 25 °C
0.1
0
0.4
0.8
1.2
1.6 2.0
94 9171
V_F - Forward Voltage (V)
Figure 2. Forward Current vs. Forward Voltage
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For technical questions within your region, please contact one of the following: Document Number 81858
[e-mail], [e-mail], [e-mail] _{Rev. 1.1, 17-Aug-10}