1N4148WS-V Datasheet, PDF (2/5 Pages) Vishay Siliconix – Small Signal Fast Switching Diode

1N4148WS-V
Vishay Semiconductors
Thermal Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to ambient air
R_thJA
650¹⁾
K/W
Junction temperature
T_j
150
°C
Storage temperature
T_stg
- 65 to + 150
°C
Note:
1) _{Valid provided that electrodes are kept at ambient temperature.}
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
I_F = 10 mA
V_F
I_F = 100 mA
V_F
1000
mV
1200
mV
V_R = 20 V
I_R
25
nA
Leakage current
V_R = 75 V
I_R
V_R = 100 V
I_R
5
µA
100
µA
V_R = 20 V, T_j = 150 °C
I_R
50
µA
Diode capacitance
V_F = V_R = 0 V
C_D
4
pF
Tested with 50 mA pulses,
Voltage rise when switching ON
(tested with 50 mA pulses)
t_p = 0.1 µs, rise time < 30 ns,
f_p = (5 to 100) kHz
V_fr
2.5
V
Reverse recovery time
I_F = 10 mA, I_R = 1 mA, V_R = 6 V,
R_L = 100 Ω
t_rr
4
ns
Rectification efficiency
f = 100 MHz, V_RF = 2 V
ην
0.45
Rectification Efficiency Measurement Circuit
60 Ω
17436
V_RF = 2 V
2 nF
5 kΩ
V_O
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number 85751
[e-mail], [e-mail], [e-mail] _{Rev. 1.8, 12-Aug-10}