1N3208 Datasheet, PDF (2/4 Pages) International Rectifier – 15 Amp Stud-mounted Silicon Rectifier Diodes

1N3208 Series
Vishay High Power Products
Stud-Mounted
Silicon Rectifier Diodes, 15 A
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current
at case temperature
I_F(AV) 180° sinusoidal conduction
Maximum peak one cycle
non-repetitive surge current
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse ^{Following any rated load}
condition and with rated
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse
V_RRM applied
I_FSM
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse ^{Following any rated load}
Half cycle 60 Hz sine wave
condition and with V_RRM
applied following surge = 0
or 5 ms rectangular pulse
Maximum I²t for fusing
Maximum I²t for individual
device fusing
t = 10 ms
t = 8.3 ms
I²t
t = 10 ms
t = 8.3 ms
With rated V_RRM applied
following surge,
initial T_J = 150 °C
With V_RRM = 0 following
surge, initial T_J = 150 °C
Maximum I²âˆšt for individual
device fusing
Maximum forward voltage drop
Maximum average reverse current
Notes
(1) _{JEDEC registered values}
(2) _I2_{t for time tx = I}2_{√t x √tx}
I²âˆšt ⁽²⁾
V_FM
I_R(AV)
t = 0.1 to 10 ms, V_RRM = 0 following surge
I_F(AV) = 15 A (47.1 A peak), T_C = 150 °C
Maximum rated I_F(AV) and T_C = 150 °C
VALUES
15 ⁽¹⁾
150 ⁽¹⁾
239
250 ⁽¹⁾
284
297
286
260
403
368
3870
1.5 ⁽¹⁾
10 ⁽¹⁾
UNITS
A
°C
A
A²s
A²âˆšs
V
mA
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating and
storage temperature range
T_J, T_Stg
Maximum internal thermal
resistance, junction to case
R_thJC DC operation
Thermal resistance,
case to sink
R_thCS Mounting surface, smooth, flat and greased
Mounting torque
minimum
maximum
Non-lubricated threads
Weight
Case style
Note
(1) _{JEDEC registered values}
JEDEC
VALUES
- 65 to 175 ⁽¹⁾
UNITS
°C
0.65
°C/W
0.25
2.3 (20)
3.5 (30)
N·m
(lbf · in)
28.5
g
1
oz.
DO-203AB (DO-5)
www.vishay.com
2
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Document Number: 93496
Revision: 24-Jun-08