1N1199A_12 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Medium Power Silicon Rectifier Diodes, 12 A

1N1...A, 1N36..A Series
Vishay High Power Products
Medium Power
Silicon Rectifier Diodes, 12 A
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current
at case temperature
I_F(AV) 180° sinusoidal conduction
Maximum peak one cycle
non-repetitive surge current
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse ^{Following any rated load}
condition and with rated
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse
V_RRM applied
I_FSM
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse ^{Following any rated load}
Half cycle 60 Hz sine wave
condition and with V_RRM
applied following surge = 0
or 5 ms rectangular pulse
Maximum I²t for fusing
Maximum I²t for individual
device fusing
t = 10 ms
t = 8.3 ms
I²t
t = 10 ms
t = 8.3 ms
With rated V_RRM applied
following surge,
initial T_J = 200 °C
With V_RRM = 0 following
surge, initial T_J = 200 °C
Maximum I²âˆšt for individual
device fusing
I²âˆšt ⁽²⁾ t = 0.1 to 10 ms, V_RRM = 0 following surge
Maximum forward voltage drop
V_FM
I_F(AV) = 12 A (38 A peak), T_C = 25 °C
V_RRM = 50
V_RRM = 100
V_RRM = 150
V_RRM = 200
V_RRM = 300
Maximum average
reverse current
V_RRM = 400
V_RRM = 500
I_R(AV) ⁽³⁾
Maximum rated I_F(AV) and T_C
V_RRM = 600
V_RRM = 700
V_RRM = 800
V_RRM = 900
V_RRM = 1000
Notes
(1) _{JEDEC registered values}
(2) _I2_{t for time tx = I}2_{√t x √tx}
(3) _{Maximum peak reverse current (IRM) under same conditions ≈ 2 x rated IR(AV)}
VALUES
12 ⁽¹⁾
150 ⁽¹⁾
230
240 ⁽¹⁾
275
285
260
240
370
340
3715
1.35 ⁽¹⁾
3.0 ⁽¹⁾
2.5 ⁽¹⁾
2.25 ⁽¹⁾
2.0 ⁽¹⁾
1.75 ⁽¹⁾
1.5 ⁽¹⁾
1.25 ⁽¹⁾
1.0 ⁽¹⁾
0.9 ⁽¹⁾
0.8 ⁽¹⁾
0.7 ⁽¹⁾
0.6 ⁽¹⁾
UNITS
A
°C
A
A²s
A²âˆšs
V
mA
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Document Number: 93493
Revision: 24-Jun-08