ERZ-V20D431 Datasheet, PDF (11/20 Pages) Panasonic Semiconductor – ZNR Transient/Surge Absorbers

“ZNR” Transient/Surge Absorbers (Type D)
■ Typical Characteristics
Voltage vs. Current
Impulse Derating (Relation between impulse
width and impulse current multiple)
ERZV09D180 to ERZV09D680
Max.
400 ^{Leakage Current}
300
200
100
90
80
70
60
50
40
30
680
560470
390
20
330
227200
10
9
8
7
6
5
4
Max. Clamping Voltage
ERZV09D180 to ERZV09D680
1000
680
560
2 times : 5 min. interval
470
up to 10 times : 2 min. interval
390
up to 10⁶ times : 10 sec. interval
330
270
220
180
100_{11100053TT4Tiimmimeeesss}
10
10 _6Times
10 _2Times
1
Test current waveform
10^–6 to 10^–3 A: Direct current
10^–1 to 10³ A: 8/20 μs
3 _{10–6 10–5}
10^–4
10^–3
10^–2
10^–1
10⁰
10¹ 10²
10³ 10⁴
10⁵
Current (A)
0.1
20
100
1000
Impulse Width (μs)
10000
ERZV09D820 to ERZV09D511
2000
.BY
-FBLBHF
$VSSFOU
.BY
$MBNQJOH
7PMUBHF
1000
900
800
700
600
500
400
300
200
471
431
391
361
511
272141
ERZV09D820 to ERZV09D511
10000
2 times : 5 min. interval
511
up to 10 times : 2 min. interval
471
up to 10⁶ times : 10 sec. interval
431
391
361
331
271
241
1000
221
201
151
121
101
820
100 ^10104T₅^iTmimeses
201
151
100
121
90
80
101
70
820
60
50
40
331
221
30
10^-6
10^-5 10^-4 10^-3
10^-2
10^-1 10⁰
Current (A)
Test Current Waveform
10^-6 to 10^-3 A: Direct Current
10^-1 to 10⁴ A: 8/20 μs
10¹
10²
10³
10⁴
10⁵
10
10 _6Times
1
20
100
1000
10000
Impulse Width (μs)
Design and specifications are each subject to change without notice. Ask factory for the current technical specifications before purchase and/or use.
Should a safety concern arise regarding this product, please be sure to contact us immediately.
01 Aug. 2012
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