DG467_11 Datasheet, PDF (11/13 Pages) Vishay Siliconix – Low Power, High Voltage SPST Analog Switches

AN823
Vishay Siliconix
255 − 260_C
10 s (max)
1X4_C/s (max)
140 − 170_C
3_C/s (max)
60-120 s (min)
Pre-Heating Zone
217_C
60 s (max)
Reflow Zone
Maximum peak temperature at 240_C is allowed.
FIGURE 3. Solder Reflow Temperature and Time Durations
3-6_C/s (max)
THERMAL PERFORMANCE
A basic measure of a device’s thermal performance is the
junction-to-case thermal resistance, Rq_jc, or the
junction-to-foot thermal resistance, Rq_jf. This parameter is
measured for the device mounted to an infinite heat sink and
is therefore a characterization of the device only, in other
words, independent of the properties of the object to which the
device is mounted. Table 1 shows the thermal performance
of the TSOP-6.
TABLE 1.
Equivalent Steady State Performance—TSOP-6
Thermal Resistance Rq_jf
30_C/W
SYSTEM AND ELECTRICAL IMPACT OF
TSOP-6
In any design, one must take into account the change in
MOSFET r_DS(on) with temperature (Figure 4).
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_D = 6.1 A
1.4
1.2
1.0
0.8
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
FIGURE 4. Si3434DV
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Document Number: 71743
27-Feb-04