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DG535 Datasheet, PDF (10/11 Pages) Vishay Siliconix – 16-Channel Wideband Video Multiplexers
DG535/536
Vishay Siliconix
DETAILED DESCRIPTION
The DG535/536 are 16-channel single-ended multiplexers
with on-chip address logic and control latches.
The multiplexer connects one of sixteen inputs (S1, S2 through
S16) to a common output (D) under the control of a 4-bit binary
address (A0 to A3). The specific input channel selected for
each address is given in the Truth Table.
All four address inputs have on-chip data latches which are
controlled by the Strobe (ST) input. These latches are
transparent when Strobe is high but they maintain the chosen
address when Strobe goes low. To facilitate easy
microprocessor control in large matrices a choice of three
independent logic inputs (EN, CS and CS) are provided on
chip. These inputs are gated together (see Figure 11) and only
when EN = CS = 1 and CS = 0 can an output switch be
selected. This necessary logic condition is then latched-in
when Strobe (ST) goes low.
CS
Latch
A0
Latch
CS
A1
Latch
A2
EN
Latch
A3
Latch
ST
FIGURE 11.CS, CS, EN, ST Control Logic
Break-before-make switching prevents momentary shorting
when changing from one input to another.
The devices feature a two-level switch arrangement whereby
two banks of eight switches (first level) are connected via two
series switches (second level) to a common DRAIN output.
In order to improve crosstalk all sixteen first level switches are
configured as “T” switches (see Figure 12).
With this method SW2 operates out of phase with SW1 and
SW3. In the on condition SW1 and SW3 are closed with SW2
open whereas in the off condition SW1 and SW3 are open and
SW2 closed. In the off condition the input to SW3 is effectively
the isolation leakage of SW1 working into the on-resistance of
SW2 (typically 200 W).
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Signal
IN
SW1
SW2
Signal
GND
SW3
Signal
OUT
FIGURE 12.
“T” Switch
Arrangement
The two second level series switches further improve
crosstalk and help to minimize output capacitance.
The DIS output can be used to signal external circuitry. DIS is
a high impedance to GND when no channel is selected and a
low impedance to GND when any one channel is selected.
The DG535/536 have extensive applications where any high
frequency video or digital signals are switched or routed.
Exceptional crosstalk and bandwidth performance is achieved
by using n-channel DMOS FETs for the “T” and series
switches.
ÉÉÉÉÉÉÉÉSÉÉourcÉÉe ÉÉÉÉGateÉÉÉÉÉÉDrainÉÉÉÉÉÉ
n+
p
n+
p–
Substrate
GND
FIGURE 13.
Cross-Section of a Single
DMOS Switch
It can clearly be seen from Figure 13 that there exists a PN
junction between the substrate and the drain/source terminals.
Should a signal which is negative with respect to the substrate
(GND pin) be connected to a source or drain terminal, then the
PN junction will become forward biased and current will flow
between the signal source and GND. This effective shorting of
the signal source to GND will not necessarily cause any
damage to the device, provided that the total current flowing
is less than the maximum rating, (i.e., 20 mA).
Document Number: 70070
S-02315—Rev. D, 05-Oct-00