W04G-E4 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Glass Passivated Single-Phase Bridge Rectifier

2W005G, 2W01G, 2W02G, 2W04G, 2W06G, 2W08G, 2W10G
www.vishay.com
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
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~
+~
~−
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Case Style WOG
PRIMARY CHARACTERISTICS
Package
WOG
I_F(AV)
V_RRM
2.0 A
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
I_FSM
I_R
V_F at I_F = 2.0 A
T_J max.
Diode variations
60 A
5 μA
1.1 V
150 °C
Quad
FEATURES
• UL recognition, file number E54214
• Ideal for printed circuit boards
• Typical I_R less than 0.5 μA
e4
• High case dielectric strength
• High surge current capability
• Solder dip 260 °C, 40 s
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for power supply, adapter, charger, lighting ballaster on
consumers, and home appliances applications.
MECHANICAL DATA
Case: WOG
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E4 - RoHS-compliant, commercial grade
Terminals: Silver plated leads, solderable per
J-STD-002 and JESD22-B102
Polarity: As marked on body
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL 2W005G 2W01G 2W02G 2W04G 2W06G 2W08G 2W10G UNIT
Maximum repetitive peak reverse voltage
V_RRM
50
100
200
400
600
800 1000 V
Maximum RMS voltage
V_RMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
V_DC
50
100
200
400
600
800 1000 V
Maximum average forward rectified current at 
0.375" (9.5 mm) lead length at (fig. 1)
I_F(AV)
2.0
A
Peak forward surge current single half sine-wave
superimposed on rated load
I_FSM
Rating for fusing (t < 8.3 ms)
I²t
60
A
15
A²s
Operating junction and storage temperature range T_J, T_STG
- 55 to + 150
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL 2W005G 2W01G 2W02G 2W04G 2W06G 2W08G 2W10G UNIT
Maximum instantaneous
forward voltage drop per
I_F = 2.0 A
V_F
diode
1.1
V
Maximum DC reverse
T_A = 25 °C
current at rated DC blocking
I_R
voltage per diode
T_A = 125 °C
5.0
μA
500
Typical junction capacitance
per diode
4.0 V, 1 MHz
C_J
40
20
pF
Revision: 08-Jul-13
1
Document Number: 88528
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000