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VT760-E3 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Low forward voltage drop, low power losses
VT760-E3, VFT760-E3, VBT760-E3, VIT760-E3
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TO-220AC
TMBS ®
ITO-220AC
VT760
PIN 1
PIN 2
2
1
CASE
TO-263AB
K
VFT760
PIN 1
PIN 2
TO-262AA
K
2
1
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA
package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
A
NC
VBT760
NC
K
A
HEATSINK
VIT760
NC
A
A
K
NC
K
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 7.5 A
TJ max.
Package
7.5 A
60 V
100 A
0.60 V
150 °C
TO-220AC, ITO-220AC,
TO-263AB, TO-262AA
Diode variations
Single die
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum






MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
IF(AV)
IFSM
Non-repetitive avalanche energy 
at TJ = 25 °C, L = 60 mH
Peak repetitive reverse current
at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C
Isolation voltage (ITO-220AB only)
from terminal to heat sink t = 1 min
EAS
IRRM
VAC
Operating junction and storage temperature range
TJ, TSTG
VT760
VFT760 VBT760
60
7.5
100
65
1.0
1500
-55 to +150
VIT760
UNIT
V
A
A
mJ
A
V
°C
Revision: 15-Dec-16
1
Document Number: 89130
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000