VT60M45C-M3 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Low forward voltage drop, low power losses

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VT60M45C-M3, VT60M45CHM3
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.32 V at I_F = 5 A
TMBS ^®
TO-220AB
VT60M45C
3
2
1
PIN 1
K
PIN 2
CASE
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F at I_F = 30 A (T_A = 125 °C)
T_J max.
Package
2 x 30 A
45 V
320 A
0.50 V
175 °C
TO-220AB
Diode variations
Dual common cathode
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
V_RRM
I_F(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I_FSM
Operating junction and storage temperature range
T_J, T_STG
VT60M45C
45
60
30
320
-40 to +175
UNIT
V
A
°C
Revision: 10-May-16
1
Document Number: 87782
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000