VT5200-E3 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Trench MOS Schottky technology

VT5200-E3, VFT5200-E3, VBT5200-E3, VIT5200-E3
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.58 V at I_F = 2.5 A
TO-220AC
TMBS ^®
ITO-220AC
VT5200
2
1
PIN 1
PIN 2
CASE
TO-263AB
K
VFT5200
PIN 1
PIN 2
TO-262AA
K
2
1
A
NC
VBT5200
NC
K
A
HEATSINK
VIT5200
NC
A
K
NC
K
A
HEATSINK
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F at I_F = 5.0 A
T_J max.
Package
5.0 A
200 V
80 A
0.65 V
150 °C
TO-220AC, ITO-220AC,
TO-263AB, TO-262AA
Diode variation
Single die
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 275 °C max. 10 s, per JESD 22-B106
(for TO-220AC, ITO-220AC and TO-262AA package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
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MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Max. repetitive peak reverse voltage
Max. average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
V_RRM
I_F(AV)
I_FSM
Non-repetitive avalanche energy at T_J = 25 °C, L = 60 mH
Peak repetitive reverse current
at t_p = 2 μs, 1 kHz, T_J = 38 °C ± 2 °C
Voltage rate of change (rated V_R)
Isolation voltage (ITO-220AC only)
from terminal to heatsink t = 1 min
E_AS
I_RRM
dV/dt
V_AC
Operating junction and storage temperature range
T_J, T_STG
VT5200
VFT5200 VBT5200
200
5.0
80
30
0.5
10 000
1500
-40 to +150
VIT5200
UNIT
V
A
A
mJ
A
V/μs
V
°C
Revision: 12-Dec-16
1
Document Number: 89176
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000