VT30L60C-E3 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Low forward voltage drop, low power losses

www.vishay.com
VT30L60C-E3, VIT30L60C-E3
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.32 V at IF = 5.0 A
TO-220AB
TMBS ^®
TO-262AA
K
3
2
1
3
2
1
VT30L60C
PIN 1
PIN 2
PIN 3
CASE
VIT30L60C
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
I_F(AV)
2 x 15 A
V_RRM
60 V
I_FSM
200 A
V_F at I_F = 15 A
T_J max.
0.45 V
150 °C
Package
TO-220AB, TO-262AA
Diode variation
Common cathode
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, and commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
V_RRM
I_F(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
Voltage rate of change (rated V_R)
dV/dt
Operating junction and storage temperature range
T_J, T_STG
VT30L60C
VIT30L60C
60
30
15
200
10 000
-40 to +150
UNIT
V
A
A
V/μs
°C
Revision: 15-Dec-16
1
Document Number: 89380
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000