VT2080S-E3 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Trench MOS Barrier Schottky Rectifier

VT2080S-E3, VFT2080S-E3, VBT2080S-E3, VIT2080S-E3
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.46 V at I_F = 5 A
TO-220AB
TMBS ^®
ITO-220AB
VT2080S
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
123
VFT2080S
PIN 1
PIN 2
PIN 3
TO-262AA
K
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB,
and TO-262AA package)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
A
NC
VBT2080S
NC
K
A
HEATSINK
VIT2080S
3
2
1
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F at I_F = 20 A
T_J max.
Package
20 A
80 V
150 A
0.70 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variations
Single die
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
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


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MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
V_RRM
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
I_F(AV)
I_FSM
Non-repetitive avalanche energy at T_J = 25 °C, L = 60 mH
Peak repetitive reverse current at t_p = 2 μs, 1 kHz,
T_J = 38 °C ± 2 °C
E_AS
I_RRM
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V_AC
Operating junction and storage temperature range
T_J, T_STG
VT2080S
VFT2080S VBT2080S VIT2080S
80
20
150
160
1.0
1500
-55 to +150
UNIT
V
A
A
mJ
A
V
°C
Revision: 11-Sep-13
1
Document Number: 89167
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000