VT1080C_12 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual Trench MOS Barrier Schottky Rectifier

New Product
VT1080C, VFT1080C, VBT1080C, VIT1080C
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.49 V at I_F = 3 A
TO-220AB
TMBS ^®
ITO-220AB
VT1080C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
123
VFT1080C
PIN 1
PIN 2
PIN 3
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TO-263AB
K
TO-262AA
K
2
1
VBT1080C
PIN 1
K
PIN 2
HEATSINK
VIT1080C
3
2
1
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
I_F(AV)
2x5A
V_RRM
80 V
I_FSM
80 A
V_F at I_F = 5 A
0.57 V
T_J max.
150 °C
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
V_RRM
I_F(AV)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
I_FSM
Non-repetitive avalanche energy at T_J = 25 °C, L = 60 mH per diode
Peak repetitive reverse current at t_p = 2 µs, 1 kHz,
T_J = 38 °C ± 2 °C per diode
Voltage rate of change (rated V_R)
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
E_AS
I_RRM
dV/dt
V_AC
Operating junction and storage temperature range
T_J, T_STG
VT1080C
VFT1080C VBT1080C VIT1080C
80
10
5
80
30
1.0
10 000
1500
- 55 to + 150
UNIT
V
A
A
mJ
A
V/µs
V
°C
Document Number: 89164
Revision: 08-Sep-09
For technical questions within your region, please contact one of the following:
[e-mail], [e-mail], [e-mail]
www.vishay.com
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