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VT1060C_12 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS Barrier Schottky Rectifier
New Product
VT1060C, VFT1060C, VBT1060C & VIT1060C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 2.5 A
TO-220AB
TMBS ®
ITO-220AB
VT1060C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
VFT1060C
123
PIN 1
PIN 2
PIN 3
TO-262AA
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB and
TO-262AA package)
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
K
K
2
1
VBT1060C
PIN 1
K
PIN 2
HEATSINK
VIT1060C
3
2
1
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 5.0 A
TJ max.
2x5A
60 V
100 A
0.50 V
150 °C
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL VT1060C
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Non-repetitive avalanche energy
at TJ = 25 °C, L = 60 mH per diode
Peak repetitive reverse current
at tp = 2 µs, 1 kHz, TJ = 38 °C ± 2 °C per diode
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
EAS
IRRM
VAC
Operating junction and storage temperature range
TJ, TSTG
VFT1060C VBT1060C
60
10
5
100
65
1.0
1500
- 55 to + 150
VIT1060C
UNIT
V
A
A
mJ
A
V
°C
Document Number: 89131
Revision: 08-Sep-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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