VT10200C-M3_15 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Trench MOS Barrier Schottky Rectifier

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VT10200C-M3
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.58 V at I_F = 2.5 A
TMBS ^®
TO-220AB
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
VT10200C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
PRIMARY CHARACTERISTICS
Package
TO-220AB
I_F(AV)
V_RRM
I_FSM
V_F at I_F = 5.0 A
T_J max.
Diode variations
2 x 5.0 A
200 V
80 A
0.65 V
150 °C
Common cathode
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
V_RRM
I_F(AV)
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
I_FSM
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
dV/dt
T_J, T_STG
VT10200C
200
10.0
5.0
80
10 000
- 40 to + 150
UNIT
V
A
A
V/μs
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage per diode
I_R = 1.0 mA
I_F = 2.5 A
I_F = 5.0 A
I_F = 2.5 A
I_F = 5.0 A
Reverse current per diode
V_R = 180 V
V_R = 200 V
T_A = 25 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_BR
V_F ⁽¹⁾
I_R ⁽²⁾
200 (minimum)
0.81
1.10
0.58
0.65
1.7
1.8
-
2.5
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
MAX.
-
-
1.60
-
0.73
-
-
150
10
UNIT
V
V
μA
mA
μA
mA
Revision: 24-May-13
1
Document Number: 87997
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000