VSSAF5N50_15 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Surface Mount Trench MOS Barrier Schottky Rectifier

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VSSAF5N50
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
TMBS^® SlimSMA^TM
Top View
Bottom View
DO-221AC
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F at I_F = 5.0 A
T_J max.
Package
5.0 A
50 V
100 A
0.41 V
150 °C
DO-221AC (SlimSMA)
Diode variations
Single die
FEATURES
• Very low profile - typical height of 0.95 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: DO-221AC (SlimSMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
TYPICAL APPLICATIONS

For use in low voltage, high frequency inverters,

freewheeling, DC/DC converters, and polarity protection
applications.
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum DC forward current (fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
V_RRM
I_F ⁽¹⁾
I_F ⁽²⁾
I_FSM
Maximum DC reverse voltage
Operating junction and storage temperature range
V_DC
T_J, T_STG
Notes
(1) _{Mounted on 10 mm x 10 mm pad areas, 2 oz. FR4 PCB}
(2) _{Free air, mounted on recommended copper pad area}
VSSAF5N50
5N5
50
5.0
3.0
100
35
-40 to +150
UNIT
V
A
A
V
°C
Revision: 24-Jul-14
1
Document Number: 87719
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000