VSSA3L6S-M3 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Trench MOS Schottky technology

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VSSA3L6S-M3
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
TMBS^®
DO-214AC (SMA)
FEATURES
• Low profile package
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Not recommended for PCB bottom side wave mounting
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F at I_F = 3.0 A
T_J max.
Package
3.0 A
60 V
80 A
0.41 V
150 °C
DO-214AC (SMA)
Diode variations
Single die
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum DC forward current
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
V_RRM
I_F ⁽¹⁾
I_F ⁽²⁾
I_FSM
dV/dt
T_J, T_STG
Notes
(1) _{Mounted on 10 mm x 10 mm pad areas, 1 oz. FR4 PCB}
(2) _{Free air, mounted on recommended copper pad area}
VSSA3L6S
3L6
60
3.0
2.5
80
10 000
-55 to +150
UNIT
V
A
A
V/μs
°C
Revision: 05-Nov-13
1
Document Number: 89346
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000