VSMY98545DS Datasheet, PDF (1/7 Pages) Vishay Siliconix – High Power Infrared Emitting Diode, 850 nm,Surface Emitter Technology

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VSMY98545DS
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm,
Surface Emitter Technology
DESCRIPTION
As part of the SurfLight^TM portfolio, the VSMY98545DS is an
infrared, 850 nm emitting diode based on surface emitter
technology with high radiant power and high speed, molded
in low thermal resistance SMD package with lens. A 42 mil
chip provides outstanding radiant intensity and allows
DC operation of the device up to 1 A. Superior ESD
characteristics are ensured by an integrated Zener diode.
FEATURES
• Package type: surface mount
• Double stack technology
• Package form: high power SMD with lens
• Dimensions (L x W x H in mm): 3.85 x 3.85 x 2.24
• Peak wavelength: λ_p = 850 nm
• Zener diode for ESD protection up to 2 kV
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 45°
• Designed for high drive currents: up to 1 A (DC) and up
to 5 A pulses
• Low thermal resistance: R_thJP = 10 K/W
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Infrared illumination for CMOS cameras (CCTV)
• Illumination for cameras (3D gaming)
• Machine vision
• 3D TV
PRODUCT SUMMARY
COMPONENT
VSMY98545DS
I_e (mW/sr)
600
Note
• Test conditions see table “Basic Characteristics”
ϕ (deg)
± 45
λ_p (nm)
850
t_r (ns)
30
ORDERING INFORMATION
ORDERING CODE
VSMY98545DS
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
REMARKS
MOQ: 600 pcs, 600 pcs/reel
PACKAGE FORM
High power with lens
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/pin
t_p/T = 0.5, t_p = 100 μs
t_p = 100 μs
Acc. figure 10, J-STD-20
Acc. J-STD-051, soldered on PCB
V_R
I_F
I_FM
I_FSM
P_V
T_j
T_amb
T_stg
T_sd
R_thJP
5
1
2
5
3.6
125
-40 to +110
-40 to +125
260
10
UNIT
V
A
A
A
W
°C
°C
°C
°C
K/W
Rev. 1.0, 08-May-15
1
Document Number: 84236
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000