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VSMY1850X01 Datasheet, PDF (1/7 Pages) Vishay Siliconix – High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology
VSMY1850X01
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 850 nm,
Surface Emitter Technology
22119
DESCRIPTION
VSMY1850X01 is an infrared, 850 nm emitting diode based
on GaAlAs surface emitter chip technology with high radiant
intensity, high optical power and high speed, molded in
clear, untinted 0805 plastic package for surface mounting
(SMD).
FEATURES
• Package type: surface mount
• Package form: 0805
• Dimensions (L x W x H in mm): 2 x 1.25 x 0.85
• AEC-Q101 qualified
• Peak wavelength: p = 850 nm
• High reliability
• High radiant power
• High radiant intensity
• High speed
• Angle of half sensitivity:  = ± 60°
• Suitable for high pulse current operation
• 0805 standard surface-mountable package
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• IrDA compatible data transmission
• Miniature light barrier
• Photointerrupters
• Optical switch
• Emitter source for proximity sensors
• IR touch panels
• IR Flash
• IR illumination
• 3D TV
PRODUCT SUMMARY
COMPONENT
VSMY1850X01
Ie (mW/sr)
10
Note
• Test conditions see table “Basic Characteristics“
 (deg)
± 60
p (nm)
850
tr (ns)
10
ORDERING INFORMATION
ORDERING CODE
VSMY1850X01
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
REMARKS
MOQ: 3000 pcs, 3000 pcs/reel
PACKAGE FORM
0805
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902
Document Number: 83317
Rev. 1.0, 13-Oct-10
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
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