VSML3710_14 Datasheet, PDF (1/7 Pages) Vishay Siliconix – High Power Infrared Emitting Diode

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VSML3710
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
948553
DESCRIPTION
VSML3710 is an infrared, 940 nm emitting diode in GaAlAs,
MQW (multi quantum well) technology with high radiant
power, molded in a PLCC-2 package for surface mounting
(SMD).
FEATURES
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength: λ_p = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Package matched with IR emitter series VEMT3700
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• IR emitter in photointerrupters, sensors, and reflective
sensors
• IR emitter in low space applications
• Household appliance
• Tactile keyboards
PRODUCT SUMMARY
COMPONENT
VSML3710
I_e (mW/sr)
9.5
Note
• Test conditions see table “Basic Characteristics”
ϕ (deg)
± 60
λ_p (nm)
940
t_r (ns)
15
ORDERING INFORMATION
ORDERING CODE
VSML3710-GS08
VSML3710-GS18
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
REMARKS
MOQ: 7500 pcs, 1500 pcs/reel
MOQ: 8000 pcs, 8000 pcs/reel
PACKAGE FORM
PLCC-2
PLCC-2
Rev. 1.6, 22-Oct-14
1
Document Number: 81300
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000