VSML3710_09 Datasheet, PDF (1/6 Pages) Vishay Siliconix – High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

VSML3710
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
94 8553
DESCRIPTION
VSML3710 is an infrared, 940 nm emitting diode in
GaAlAs/GaAs technology with high radiant power, molded
in a PLCC-2 package for surface mounting (SMD).
FEATURES
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength: λ_p = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Package matched with IR emitter series VEMT3700
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Find out more about Vishay’s Automotive Grade Product
requirements at: www.vishay.com/applications
APPLICATIONS
• IR emitter in photointerrupters, sensors and reflective
sensors
• IR emitter in low space applications
• Household appliance
• Tactile keyboards
PRODUCT SUMMARY
COMPONENT
VSML3710
I_e (mW/sr)
8
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
VSML3710-GS08
VSML3710-GS18
Note
MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
ϕ (deg)
± 60
λ_p (nm)
940
REMARKS
MOQ: 7500 pcs, 1500 pcs/reel
MOQ: 8000 pcs, 8000 pcs/reel
t_r (ns)
800
PACKAGE FORM
PLCC-2
PLCC-2
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902
Document Number: 81300
Rev. 1.4, 03-Nov-09
For technical questions, contact: [e-mail]
www.vishay.com
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