VSML3710_08 Datasheet, PDF (1/6 Pages) Vishay Siliconix – High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs

VSML3710
Vishay Semiconductors
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm,
GaAlAs/GaAs
94 8553
DESCRIPTION
VSML3710 is an infrared, 940 nm emitting diode in
GaAlAs/GaAs technology with high radiant power, molded in
a PLCC-2 package for surface mounting (SMD).
FEATURES
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength: λ_p = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Package matched with IR emitter series VEMT3700
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• IR emitter in photointerrupters, sensors and reflective
sensors
• IR emitter in low space applications
• Household appliance
• Tactile keyboards
PRODUCT SUMMARY
COMPONENT
VSML3710
I_e (mW/sr)
8
Note
Test conditions see table “Basic Characteristics”
ϕ (deg)
± 60
λ_P (nm)
940
t_r (ns)
800
ORDERING INFORMATION
ORDERING CODE
VSML3710-GS08
VSML3710-GS18
Note
MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
t_p/T = 0.5, t_p = 100 µs
t_p = 100 µs
REMARKS
MOQ: 7500 pcs, 1500 pcs/reel
MOQ: 8000 pcs, 8000 pcs/reel
PACKAGE FORM
PLCC-2
PLCC-2
SYMBOL
V_R
I_F
I_FM
I_FSM
P_V
VALUE
5
100
200
1
160
UNIT
V
mA
mA
A
mW
Document Number: 81300
Rev. 1.3, 04-Sep-08
For technical questions, contact: [e-mail]
www.vishay.com
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