VSML3710 Datasheet, PDF (1/8 Pages) Vishay Siliconix – High Power Infrared Emitting Diode, 940 nm RoHS Compliant, Released for Lead (Pb)-free Solder Process

VSML3710
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm
RoHS Compliant, Released for Lead (Pb)-free Solder Process
Description
VSML3710 is an infrared emitting diode in GaAlAs on
GaAs technology in miniature PLCC-2 SMD package,
released for Lead (Pb)-free Reflow Soldering.
Features
• High radiant power
• Low forward voltage
• Angle of half intensity: ϕ = ± 60°
e3
• Peak wavelength: λ_p = 940 nm
• Compatible with automatic placement equipment
• EIA and ICE standard package
• Lead (Pb)-free reflow soldering acc. J-STD-020
• Packed in 8 mm tape
• Suitable for pulse current operation
• Phototransistor with matched package:
VEMT3700
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
94 8553
Applications
• IR emitter in photointerrupters, sensors and reflec-
tive sensors
• Household appliance
• IR emitter in low space applications
• Tactile keyboards
Order Instructions
Part
VSML3710
VSML3710
Ordering code
VSML3710-GS08
VSML3710-GS18
Remarks
MOQ: 7500 pcs, 1500 pcs per reel
MOQ: 8000 pcs, 8000 pcs per reel
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
t_p/T = 0.5, t_p = 100 µs
t_p = 100 µs
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
acc. figure 11
Thermal resistance
junction / ambient
Symbol
Value
Unit
V_R
5
V
I_F
100
mA
I_FM
200
mA
I_FSM
1
A
P_V
170
mW
T_j
100
°C
T_amb
- 40 to + 85
°C
T_stg
- 40 to +100
°C
T_sd
260
°C
R_thJA
400
K/W
Document Number 81300
Rev. 1.2, 25-Jan-07
www.vishay.com
1