VSMG3700_13 Datasheet, PDF (1/6 Pages) Vishay Siliconix – High Speed Infrared Emitting Diode

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VSMG3700
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm,
GaAlAs Double Hetero
948553
DESCRIPTION
VSMG3700 is an infrared, 850 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a PLCC-2 package for surface
mounting (SMD).
FEATURES
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength: λ_p = 850 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation band width: f_c = 18 MHz
• Good spectral matching with Si photodetectors
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Infrared radiation source for operation with CMOS
cameras (illumination)
• High speed IR data transmission
PRODUCT SUMMARY
COMPONENT
VSMG3700
I_e (mW/sr)
10
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
VSMG3700-GS08
VSMG3700-GS18
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
ϕ (deg)
± 60
λ_p (nm)
850
REMARKS
MOQ: 7500 pcs, 1500 pcs/reel
MOQ: 8000 pcs, 8000 pcs/reel
t_r (ns)
20
PACKAGE FORM
PLCC-2
PLCC-2
Rev. 1.5, 24-Sep-13
1
Document Number: 81471
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000