VSMG3700_10 Datasheet, PDF (1/6 Pages) Vishay Siliconix – High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero

VSMG3700
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
94 8553
DESCRIPTION
VSMG3700 is an infrared, 850 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a PLCC-2 package for surface
mounting (SMD).
FEATURES
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength: λ_p = 850 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation band width: f_c = 18 MHz
• Good spectral matching with Si photodetectors
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• Infrared radiation source for operation with CMOS
cameras (illumination)
• High speed IR data transmission
PRODUCT SUMMARY
COMPONENT
VSMG3700
I_e (mW/sr)
10
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
VSMG3700-GS08
VSMG3700-GS18
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
ϕ (deg)
± 60
λ_p (nm)
850
REMARKS
MOQ: 7500 pcs, 1500 pcs/reel
MOQ: 8000 pcs, 8000 pcs/reel
t_r (ns)
20
PACKAGE FORM
PLCC-2
PLCC-2
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902
Document Number: 81471
Rev. 1.4, 06-Oct-10
For technical questions, contact: [e-mail]
www.vishay.com
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