VSMG3700 Datasheet, PDF (1/6 Pages) Vishay Siliconix – High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero

VSMG3700
Vishay Semiconductors
High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm,
GaAlAs Double Hetero
94 8553
DESCRIPTION
VSMG3700 is an infrared, 850 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a PLCC-2 package for surface
mounting (SMD).
FEATURES
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength: λ_p = 850 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation band width: f_c = 18 MHz
• Good spectral matching with Si photodetectors
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• Infrared radiation source for operation with CMOS
cameras (illumination)
• High speed IR data transmission
PRODUCT SUMMARY
COMPONENT
VSMG3700
I_e (mW/sr)
10
Note
Test conditions see table “Basic Characteristics”
ϕ (deg)
± 60
λ_P (nm)
850
t_r (ns)
20
ORDERING INFORMATION
ORDERING CODE
VSMG3700-GS08
VSMG3700-GS18
Note
MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
t_p/T = 0.5, t_p = 100 µs
t_p = 100 µs
REMARKS
MOQ: 7500 pcs, 1500 pcs/reel
MOQ: 8000 pcs, 8000 pcs/reel
PACKAGE FORM
PLCC-2
PLCC-2
SYMBOL
V_R
I_F
I_FM
I_FSM
P_V
VALUE
5
100
200
1
180
UNIT
V
mA
mA
A
mW
www.vishay.com
312
For technical questions, contact: [e-mail]
Document Number: 81471
Rev. 1.2, 04-Sep-08