VSMG285011RG Datasheet, PDF (1/9 Pages) Vishay Siliconix – High Speed Infrared Emitting Diodes, 850 nm, GaAlAs, DH

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VSMG285011RG, VSMG285011G
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 850 nm, GaAlAs, DH
VSMG285011RG
VSMG285011G
DESCRIPTION
VSMG28511 series are infrared, 850 nm emitting diodes in
GaAlAs (DH) technology with high radiant power and high
speed, molded in clear, untinted plastic packages (with lens)
for surface mounting (SMD).
FEATURES
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8
• Peak wavelength: λ_p = 850 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 12°
• Low forward voltage
• Suitable for high pulse current operation
• Terminal configurations: Gullwing or reserve gullwing
• Package matches with detector VEMD2000X01 series
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Data transmission
• IR-illumination (CCTV)
• Miniature light barrier
• Photointerrupters
• Optical switch
• Shaft encoders
• IR emitter source for proximity applications
• Smoke detectors
PRODUCT SUMMARY
COMPONENT
VSMG285011RG
VSMG285011G
I_e (mW/sr)
40
40
Note
• Test conditions see table “Basic Characteristics“
ϕ (deg)
± 12
± 12
λ_p (nm)
850
850
t_r (ns)
20
20
ORDERING INFORMATION
ORDERING CODE
VSMG285011RG
VSMG285011G
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
REMARKS
MOQ: 6000 pcs, 6000 pcs/reel
MOQ: 6000 pcs, 6000 pcs/reel
PACKAGE FORM
Reverse gullwing
Gullwing
Rev. 1.0, 05-Aug-14
1
Document Number: 84229
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000