VSMG10850 Datasheet, PDF (1/2 Pages) Vishay Siliconix – High Speed Infrared Emitting Diode, 850 nm, GaAlAs, DH

Product Group: Vishay Optoelectronics, Sensors / May 2013
Author: Joerg Wedermann
Tel: [phone]
E-mail: [e-mail]
New VSMG10850 and VSMB10940
Infrared Emitters and VEMD10940F
Silicon PIN Photodiode
The News:
Vishay Intertechnology Introduces New High-Speed 850 nm and
940 nm IR Emitters and Package-Matched High-Speed Silicone PIN
Photodiode With Daylight Blocking Filter
Vishay Intertechnology, Inc. (NYSE: VSH) broadens its optoelectronics portfolio with the introduction
of two new high-speed 850 nm and 940 nm infrared emitters and a package-matched high-speed
silicon PIN photodiode with high radiant sensitivity from 780 nm to 1050 nm. The VSMG10850,
VSMB10940, and VEMD10940F each offer an ultra-wide ± 75° angle of half intensity in a compact
side-view surface-mount package measuring 3 mm by 2 mm by 1 mm.
Product Benefits:
• Compact package measures 3 mm by 2 mm with a height
of only 1 mm
• Ultra-wide ±75° angle of half intensity
• IR emitters
• Peak wavelengths of 850 nm and 940 nm
• Clear, untinted plastic packages
• High radiant intensity of 1 mW/sr typical at 20 mA
• Fast switching times of 15 ns
• GaAIAs multi quantum well and double hetero
technology
• Low forward voltage down to 1.3 V typical
• Photodiode
• High radiant sensitivity from 780 nm to 1050 nm
• Features a daylight blocking filter matched with 830 nm to 950 nm IR emitters
• Reverse light current of 3 µA
• Low dark current of 1 nA
• 920 nm wavelength of peak sensitivity
• Low 0.1 %/K temperature coefficient of light current
• Floor life of 168 hours and moisture sensitivity level (MSL) of 3 in accordance with J-STD-020
• Support lead (Pb)-free reflow soldering
• Conform to Vishay’s “Green” standards