VSMF4710 Datasheet, PDF (1/6 Pages) Vishay Siliconix – High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero

VSMF4710
Vishay Semiconductors
High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm,
GaAlAs Double Hetero
94 8553
DESCRIPTION
VSMF4710 is an infrared, 870 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a PLCC-2 package for surface
mounting (SMD).
FEATURES
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength: λ_p = 870 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation band width: f_c = 24 MHz
• Good spectral matching with Si photodetectors
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• High speed IR data transmission
• High power emitter for low space applications
• High performance transmissive or reflective sensors
PRODUCT SUMMARY
COMPONENT
VSMF4710
I_e (mW/sr)
10
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
VSMF4710-GS08
VSMF4710-GS18
Note
MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
ϕ (deg)
± 60
λ_P (nm)
870
REMARKS
MOQ: 7500 pcs, 1500 pcs/reel
MOQ: 8000 pcs, 8000 pcs/reel
t_r (ns)
15
PACKAGE FORM
PLCC-2
PLCC-2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
t_p/T = 0.5, t_p = 100 µs
t_p = 100 µs
SYMBOL
V_R
I_F
I_FM
I_FSM
P_V
VALUE
5
100
200
1
160
UNIT
V
mA
mA
A
mW
Document Number: 81470
Rev. 1.2, 04-Sep-08
For technical questions, contact: [e-mail]
www.vishay.com
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