VSMF3710 Datasheet, PDF (1/8 Pages) Vishay Siliconix – High Speed Infrared Emitting Diode, 890 nm RoHS Compliant, Released for Lead (Pb)-free Solder Process

VSMF3710
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm
RoHS Compliant, Released for Lead (Pb)-free Solder Process
Description
VSMF3710 is a high speed infrared emitting diode in
GaAlAs double hetero (DH) technology in a miniature
PLCC-2 SMD package.
DH technology combines high speed with high radiant
power at wavelength of 890 nm.
Features
• High radiant power
• High speed: t_r = 30 ns
• High modulation band width: f_c = 12 MHz _e3
• Peak wavelength: λ_p = 890 nm
• High reliability
• Low forward voltage
• Suitable for high pulse current application
• Wide angle of half intensity
• Compatible with automatic placement equipment
• EIA and ICE standard package
• 8 mm tape and reel standard: GS08 or GS18
• Lead (Pb)-free reflow soldering
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
94 8553
Applications
• High speed IR data transmission
• High power emitter for low space applications
• High performance transmissive or reflective
sensors
Order Instructions
Part
VSMF3710
VSMF3710
Ordering code
VSMF3710-GS08
VSMF3710-GS18
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
Forward current
Peak forward current
Surge forward current
t_p/T = 0.5, t_p = 100 µs
t_p = 100 µs
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
acc. figure 8, J-STD-020B
Thermal resistance
junction / ambient
Remarks
MOQ: 7500 pcs, 1500 pcs per reel
MOQ: 8000 pcs, 8000 pcs per reel
Symbol
Value
Unit
V_R
5
V
I_F
100
mA
I_FM
200
mA
I_FSM
1
A
P_V
170
mW
T_j
100
°C
T_amb
- 40 to + 85
°C
T_stg
- 40 to + 100
°C
T_sd
260
°C
R_thJA
400
K/W
Document Number 81241
Rev. 1.5, 25-Jan-07
www.vishay.com
1