VSMF2893SLX01 Datasheet, PDF (1/6 Pages) Vishay Siliconix – High Speed Infrared Emitting Diode, 890 nm, GaAlAs, DH

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VSMF2893SLX01
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs, DH
DESCRIPTION
VSMF2893SLX01 is an infrared, 890 nm, side looking
emitting diode in GaAlAs (DH) technology with high radiant
power and high speed, molded in clear, untinted plastic
package (with lens) for surface mounting (SMD).
FEATURES
• Package type: surface mount
• Package form: side view
• Dimensions (L x W x H in mm): 2.3 x 2.55 x 2.3
• AEC-Q101 qualified
• Peak wavelength: _p = 890 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity:  = ± 25°
• Low forward voltage
• Suitable for high pulse current operation
• Package matches with detector VEMD2xx3SSLX01 and
VEMT2xx3SLX01 series
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• IrDA compatible data transmission
• 3D TV
• IR touch panels
• Miniature light barrier
• Photointerrupters
• Optical switch
• Shaft encoders
• IR emitter source for proximity applications
PRODUCT SUMMARY
COMPONENT
VSMF2893SLX01
I_e (mW/sr)
20
Note
• Test conditions see table “Basic Characteristics“
 (deg)
± 25
_p (nm)
890
t_r (ns)
30
ORDERING INFORMATION
ORDERING CODE
VSMF2893SLX01
Note
• MOQ: minimum order quantity



PACKAGING
Tape and reel
REMARKS
MOQ: 3000 pcs, 3000 pcs/reel
PACKAGE FORM
Side view
Rev. 1.0, 26-Feb-13
1
Document Number: 83483
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000