VSLY3850 Datasheet, PDF (1/5 Pages) Vishay Siliconix – High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology

VSLY3850
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm,
Surface Emitter Technology
94 8636
DESCRIPTION
VSLY3850 is an infrared, 850 nm emitting diode based on
GaAlAs surface emitter chip technology with extreme high
radiant intensity, high optical power and high speed, molded
in a clear, untinted T1 plastic package.
FEATURES
• Package type: leaded
• Package form: T-1, clear epoxy
• Dimensions: Ø 3 mm
• Peak wavelength: _p = 850 nm
• High speed
• High radiant power
• High radiant intensity
• Angle of half intensity:  = ± 18°
• Suitable for high pulse current operation
• Good spectral matching with CMOS cameras
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Infrared radiation source for operation with CMOS
cameras
• High speed IR data transmission
• 3D TV application
• Light curtains
PRODUCT SUMMARY
COMPONENT
VSLY3850
I_e (mW/sr)
70
Note
Test conditions see table “Basic Characteristics”
 (deg)
± 18
_p (nm)
850
t_r (ns)
10
ORDERING INFORMATION
ORDERING CODE
VSLY3850
Note
MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 5000 pcs, 5000 pcs/bulk
PACKAGE FORM
T-1
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
t_p/T = 0.5, t_p = 100 μs
t_p = 100 μs
t  5 s, 2 mm from case
J-STD-051, leads 7 mm, soldered on PCB
V_R
I_F
I_FM
I_FSM
P_V
T_j
T_amb
T_stg
T_sd
R_thJA
VALUE
5
100
200
1
190
100
- 40 to + 85
- 40 to + 100
260
300
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Document Number: 82395
Rev. 1.0, 13-Oct-10
For technical questions, contact: [e-mail]
www.vishay.com
1