VSLB9530S Datasheet, PDF (1/8 Pages) Vishay Siliconix – High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW

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VSLB9530S
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
19232
DESCRIPTION
VSLB59530S, is an infrared, 940 nm emitting diode in
GaAlAs multi-quantum well (MQW) technology with high
radiant power and high speed. It is molded in a clear high
power TELUX package with an oval lens resulting in angle of
half intensities in vertical direction of ± 18° and in horizontal
direction of ± 36°.
FEATURES
• Package type: leaded
• Package form: TELUX
• Dimensions (L x W x H in mm): 7.62 x 7.62 x 4.6
• Peak wavelength: λ_p = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity, vertical: ϕ_v = ± 18°
• Angle of half intensity, horizontal: ϕ_h = ± 36°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: f_c = 24 MHz
• Good spectral matching with Si photodetectors
• Compatible with wave solder processes according to
CECC 00802
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Emitter source for gesture recognition applications
• Emitter source for 3D TV
• Emitter source for mid range proximity detection
• Emitter source for object/presence detection
PRODUCT SUMMARY
COMPONENT
VSLB9530S
I_e (mW/sr)
60
ϕ_v (deg)
± 18
Note
• Test conditions see table “Basic Characteristics“
ϕ_h (deg)
± 36
λ_p (nm)
940
t_r (ns)
15
ORDERING INFORMATION
ORDERING CODE
VSLB9530S
Note
• MOQ: minimum order quantity
PACKAGING
Tube
REMARKS
MOQ: 2100 pcs, 70 pcs/tube
PACKAGE FORM
TELUX
Rev. 1.1, 03-Sep-13
1
Document Number: 82564
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000