VSLB4940 Datasheet, PDF (1/5 Pages) Vishay Siliconix – High Speed Infrared Emitting Diode

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VSLB4940
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
94 8636-2
DESCRIPTION
VSLB4940 is a high speed infrared emitting diode in GaAlAs,
MQW technology, molded in a clear plastic package.
FEATURES
• Package type: leaded
• Package form: T-1, clear epoxy
• Dimensions: Ø 3 mm
• High speed
• High radiant power
• Low forward voltage
• Suitable for high pulse current operation
• Angle of half intensity: ϕ = ± 22°
• Peak wavelength: λ_p = 940 nm
• Good spectral matching to Si photodetectors
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Infrared remote control units
• Reflective sensors
• Light barriers
PRODUCT SUMMARY
COMPONENT
VSLB4940
I_e (mW/sr)
65
Note
• Test conditions see table “Basic Characteristics“
ϕ (deg)
± 22
λ_p (nm)
940
t_r (ns)
15
ORDERING INFORMATION
ORDERING CODE
VSLB4940
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 5000 pcs, 5000 pcs/bulk
PACKAGE FORM
T-1
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction / ambient
t_p/T = 0.1, t_p = 100 μs
t_p = 100 μs
t ≤ 5 s, 2 mm from case
J-STD-051, leads 7 mm, soldered on PCB
V_R
I_F
I_FM
I_FSM
P_V
T_j
T_amb
T_stg
T_sd
R_thJA
VALUE
5
100
500
1
160
100
-25 to +85
-40 to +100
260
300
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Rev. 1.0, 24-Jun-16
1
Document Number: 84343
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000