VSLB3940_10 Datasheet, PDF (1/5 Pages) Vishay Siliconix – High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW

VSLB3940
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
94 8636
DESCRIPTION
VSLB3940 is a high speed infrared emitting diode in GaAlAs,
MQW technology, molded in a clear plastic package.
FEATURES
• Package type: leaded
• Package form: T-1, clear epoxy
• Dimensions: Ø 3 mm
• Peak wavelength: λ_p = 940 nm
• High speed
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 22°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching to Si photodetectors
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Infrared remote control units
• Free air transmission systems
• Infrared source for optical counters and card readers
PRODUCT SUMMARY
COMPONENT
VSLB3940
I_e (mW/sr)
65
Note
Test conditions see table “Basic Characteristics”
ϕ (deg)
± 22
λ_p (nm)
940
t_r (ns)
15
ORDERING INFORMATION
ORDERING CODE
VSLB3940
Note
MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 5000 pcs, 5000 pcs/bulk
PACKAGE FORM
T-1
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
t_p/T = 0.1, t_p = 100 µs
t_p = 100 µs
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t ≤ 5 s, 2 mm from case
Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB
Note
T_amb = 25 °C, unless otherwise specified
SYMBOL
V_R
I_F
I_FM
I_FSM
P_V
T_j
T_amb
T_stg
T_sd
R_thJA
VALUE
5
100
1
1.5
160
100
- 40 to + 85
- 40 to + 100
260
300
UNIT
V
mA
A
A
mW
°C
°C
°C
°C
K/W
Document Number: 81931
Rev. 1.3, 23-Feb-10
For technical questions, contact: [e-mail]
www.vishay.com
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